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TPCP8404 2010-02-01 1 toshiba field effect transistor silicon p, n ch annel mos type (u-mo /u-mos ) TPCP8404 portable equipment applications motor drive applications ? low drain-source on-resistance : p channel r ds (on) = 38 m ? (typ.) (vgs= ? 10v) n channel r ds (on) = 38 m ? (typ.) vgs=10v) ? high forward transfer admittance : p channel |y fs | = 7.3 s (typ.) n channel |y fs | = 8 s (typ.) ? low leakage current : p channel i dss = ? 10 a (max) (v ds = ? 30 v) n channel i dss = 10 a (max) (v ds = 30 v) ? enhancement mode : p channel v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) n channel v th = 1.3 to 2.5 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ? 30 30 v drain-gate voltage (r gs = 20 k ) v dgr ? 30 30 v gate-source voltage v gss 20 20 v dc (note 1) i d ?4 4 drain current pulse (note 1) i dp ?16 16 a single-device operation (note 3a) p d (1) 1.48 1.48 drain power dissipation (t = 5 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 1.23 1.23 single-device operation (note 3a) p d (1) 0.58 0.58 drain power dissipation (t = 5 s) (note 2b) single-device value at dual operation (note 3b) p d (2) 0.36 0.36 w single pulse avalanche energy (note 4) e as 2.6 2.6 mj avalanche current i ar ? 2 2 a repetitive avalanche energy single-device value at dual operation (note 2a, 3b, 5) e ar 0.009 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 5, refer to the next page. using continuously under heavy lo ads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sens itive device. handle with caution. unit: mm jedec ? jeita ? toshiba 2-3v1g weight: 0.017 g (typ.) circuit configuration marking (note 6) 8 7 6 5 1 2 3 4 8404 1 2 3 4 8 7 6 5 lot no. 5 drain2 6 drain2 7 drain1 8 drain1 1 source1 2 gate1 3 source2 4 gate2 0.330.05 0.28 +0.1 -0.11 1.12 +0.13 -0.12 2.40.1 0.475 0.65 2.80.1 a 0.05 m 2.90.1 4 1 5 8 0.80.05 0.170.02 b b 0.05 m a s 0.025 s 1.12 +0.13 -0.12 0.28 +0.1 -0.11
TPCP8404 2010-02-01 2 thermal characteristics characteristics symbol max unit single-device operation (note 3a) r th (ch-a) (1) 84.5 thermal resistance, channel to ambient (t = 5 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 101.6 c/w single-device operation (note 3a) r th (ch-a) (1) 215.5 thermal resistance, channel to ambient (t = 5 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 347.2 c/w note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: a) the power dissipation and thermal resistance values shown are for a single device. (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal resistance values shown are for a single device. (during dual operation, power is evenly applied to both devices.) note 4: p channel: v dd = ? 24 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = ? 2 a n channel: v dd = 24 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = 2 a note 5: repetitive rating: pulse width limited by maximum channel temperature note 6: on the lower left of the marking indicates pin 1. weekly code (3 digits): week of manufacture (01 for the first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) 25.4 25.4
TPCP8404 2010-02-01 3 p-ch electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cut-off current i dss v ds = ?30 v, v gs = 0 v ? ? ?10 a v (br) dss i d = ?10 ma, v gs = 0 v ?30 ? ? drain-source breakdown voltage v (br) dsx i d = ?10 ma, v gs = 20 v ?10 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ?1 ma ?0.8 ? ? 2.0 v v gs = ?4.5 v, i d = ?2.0 a ? 58 80 drain-source on resistance r ds (on) v gs = ?10 v, i d = ?2.0 a ? 38 50 m forward transfer admittance |y fs | v ds = ?10 v, i d = ?2.0 a 3.7 7.3 ? s input capacitance c iss ? 510 ? reverse transfer capacitance c rss ? 110 ? output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz ? 170 ? pf rise time t r ? 11 ? turn-on time t on ? 20 ? fall time t f ? 37 ? switching time turn-off time t off duty 1%, t w = 10 s ? 99 ? ns total gate charge (gate-source plus gate-drain) q g ? 13 ? gate-source charge 1 q gs1 ? 1.7 ? gate-drain (?miller?) charge q gd v dd ?24 v, v gs = ? 10 v, i d = ?4 a ? 4.6 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 16 a forward voltage (diode) v dsf i dr = ?4 a, v gs = 0 v ? ? 1.2 v r l = 7.5 v dd ?15 v ?10 v 0 v 4.7 i d = ?2 a v out
TPCP8404 2010-02-01 4 n-ch electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 10 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.3 ? 2.5 v v gs = 4.5 v, i d = 2 a ? 58 80 drain-source on resistance r ds (on) v gs = 10 v, i d = 2 a ? 38 50 m forward transfer admittance |y fs | v ds = 10 v, i d = 2 a 4 8 ? s input capacitance c iss ? 190 ? reverse transfer capacitance c rss ? 45 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 60 ? pf rise time t r ? 4.5 ? turn-on time t on ? 9.0 ? fall time t f ? 3.0 ? switching time turn-off time t off duty 1%, t w = 10 s ? 12 ? ns total gate charge (gate-source plus gate-drain) q g ? 4.6 ? gate-source charge 1 q gs1 ? 0.7 ? gate-drain (?miller?) charge q gd v dd 24 v, v gs = 10 v, i d = 4 a ? 1.4 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 16 a forward voltage (diode) v dsf i dr = 4 a, v gs = 0 v ? ? ? 1.2 v r l =7.5 v dd 15 v 0 v v gs 10 v 4.7 i d = 2 a v out
TPCP8404 2010-02-01 5 p-ch 1 0.1 ? 1 ? 100 100 1000 v gs = ? 4.5 v ? 10 10 ? 10 25 100 ta = ? 55c ? 0.1 ? 1 ? 10 ? 100 0.1 1 10 100 ? 8 ? 10 0 ? 0.5 ? 1 ? 1.5 ? 2 i d = ? 4 a ? 2 ? 1 0 ? 2 ? 4 ? 6 ta = ? 55c 25 100 0 ? 1 ? 2 ? 3 ? 5 ? 4 ? 10 ? 8 ? 4 ? 2 0 ? 6 v gs = ? 2.4 v ? 2.6 ? 3.6 ? 3 ? 10 ? 3.4 ? 6 ? 3.2 ? 2.8 ? 4.5 ? 10 ? 8 ? 4 ? 2 0 ? 6 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 4 ? 5 ? 4 ? 2 ? 1 0 ? 3 v gs = ? 2.4 v ? 3.4 ? 2.6 ? 3 ? 2.8 ? 3.6 ? 3.2 ? 10 ? 6 ? 4.5 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1 ? 4 drain current i d (a) r ds (on) ? i d drain? source on-resistance r ds (on) (m ) gate? source voltage v gs (v) i d ? v gs drain current i d (a) drain? source voltage v ds (v) gate ? source voltage v gs (v) v ds ? v gs drain? source voltage v ds (v) i d ? v ds drain current i d (a) drain ? source voltage v ds (v) i d ? v ds drain current i d (a) drain current i d (a) ? y fs ? ? i d forward transfer admittance ? y fs ? (s) common source ta = 25c pulse test common source ta = 25c pulse test common source v ds = ? 10 v pulse test common source ta = 25 pulse test common source ta = 25c pulse test common source v ds = ? 10 v pulse test
TPCP8404 2010-02-01 6 p-ch 0 4 8 v dd = ? 24 v v ds v gs 16 20 ? 25 ? 10 0 ? 15 ? 20 ? 30 ? 20 0 ? 12 ? 6 ? 6 ? 12 v dd = ? 24 v ? 5 ? 10 ? 30 12 ? 25 ? 15 ? 5 0 ? 0.4 ? 1.2 ? 1.6 ? 2.0 ? 80 ? 40 0 40 80 120 160 ? 0.8 ? 0.1 10 100 10000 ? 1 ? 10 ? 100 c iss c oss c rss 1000 0 ? 0.1 0.2 ? 1 ? 10 0.8 1 v gs = 0 v ? 4.5 ? 3 ? 1 ? 10 0.4 1.2 0.6 v gs = ? 10 v v gs = ? 4.5 v i d = ? 1, ? 2, ? 4 a ? 80 100 80 40 20 0 60 160 ? 40 0 40 80 120 i d = ? 1, ? 2 a ? 4 2.0 0.8 0 0 50 150 0.4 1.2 1.6 200 (1) (2) (3) (4) 100 drain? source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz ta = 25c ambient temperature ta (c) r ds (on) ? ta drain? source on-resistance r ds (on) (m ) drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta common source v ds = ? 10 v i d = ? 1m a pulse test common source ta = 25c pulse test gate? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) common source i d = ? 4 a ta = 25c pulse test drain power dissipation p d (w) ambient temperature ta (c) p d ? ta device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t = 5 s common source pulse test
TPCP8404 2010-02-01 7 p-ch ? 10 ? 0.1 ? 100 ? 10 ? 1 ? 100 ? 1 ? 0.1 10 ms * 1 ms * v dss ma x ? 0.01 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 (1) (2) (3) (4) drain? source voltage v ds (v) safe operating area drain current i d (a) i d max (pulse) * r th ? t w pulse width t w (s) single pulse transient thermal impedance r th ( /w) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) * single pulse ta = 25c curves must be derated linearly with increase in temperature.
TPCP8404 2010-02-01 8 n-ch 1 0.1 1 100 10 1000 10 100 v gs = 4.5 v 10 0.1 1000 10 0.1 100 1 1 10 25 100 ta = ? 55c 100 i d = 4 a 2 1 0 0 8 10 2 4 6 2.0 1.5 0.5 1 ta = ? 55c 25 100 0 0 4 5 1 2 3 10 6 2 4 8 i d ? v ds v gs = 3 v 3.8 6 5 3.4 10 3.6 3.2 8 10 8 4 2 0 6 0 4 5 1 2 3 4 i d ? v ds 5 4 2 1 0 v gs = 2.8 v 3.4 4.5 3 3.8 6 3.6 10 3 0 0.8 1.0 0.2 0.4 0.6 8 5 4 3.2 drain current i d (a) r ds (on) ? i d drain? source on-resistance r ds (on) (m ) gate? source voltage v gs (v) i d ? v gs drain current i d (a) common source v ds = 10 v pulse test drain? source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs drain? source voltage v ds (v) drain current i d (a) common source ta = 25c pulse test drain ? source voltage v ds (v) drain current i d (a) drain current i d (a) ? y fs ? ? i d forward transfer admittance ? y fs ? (s) common source ta = 25c pulse test common source ta = 25 pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test
TPCP8404 2010-02-01 9 n-ch 0 2 4 v dd = 24 v v ds v gs 6 8 20 10 0 15 12 6 24 12 v dd = 6 v 5 30 25 20 10 0 15 5 30 25 2.0 0.8 0 0 25 50 125 150 0.4 1.2 1.6 200 (1) (2) (3) (4) 75 100 175 0 1 3 ? 80 ? 40 0 40 80 120 160 2 0.1 1 10 100 1000 1 10 100 c iss c oss c rss 0 0.1 ? 0.2 1 10 ? 0.6 ? 0.8 ? 1.2 v gs = 0 v 4.5 3 1 10 ? 0.4 ? 1.0 160 ? 40 0 40 80 120 ? 80 100 40 0 v gs = 10 v v gs = 4.5 v i d = 4, 2, 1 a 60 i d = 4 a 80 20 2 1 drain? source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz ta = 25c ambient temperature ta (c) r ds (on) ? ta drain? source on-resistance r ds (on) (m ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta common source v ds = 10 v i d = 1 ma pulse test common source pulse test common source ta = 25c pulse test gate? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain? source voltage v ds (v) common source i d = 4 a ta = 25c pulse test drain power dissipation p d (w) ambient temperature ta (c) p d ? ta device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t = 5 s
TPCP8404 2010-02-01 10 n-ch 10 0.1 100 10 1 100 10 ms * 1 ms * v dss max 1 0.01 0.01 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 (1) (2) (3) (4) r th ? t w pulse width t w (s) single pulse transient thermal impedance r th ( /w) drain? source voltage v ds (v) safe operating area i d max (pulse) * drain current i d (a) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) * single pulse ta = 25c curves must be derated linearly with increase in temperature.
TPCP8404 2010-02-01 11 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.

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